NGTB30N120FL2WG
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionINSULATED GATE BIPOLAR TRANSISTO
- CategoryTransistors - IGBTs - Single
- Datasheet NGTB30N120FL2WG Datasheet
-
ECAD Model
- Share
In Stock: 3,837
Can ship immediately
Pricing:
- 1$4.79
- 30$3.92566
- 120$3.5427
- 510$2.96822
- 1,020$2.58523
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- IGBT Type:Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):1.2 V
- Current - Collector (Ic) (Max):60 A
- Current - Collector Pulsed (Icm):120 A
- Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 30A
- Power - Max:452 W
- Switching Energy:2.6mJ (on), 700µJ (off)
- Input Type:Standard
- Gate Charge:220 nC
- Td (on/off) @ 25°C:98ns/210ns
- Test Condition:600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr):240 ns
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Supplier Device Package:TO-247
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