STGP6M65DF2
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRENCH GATE FIELD-STOP IGBT M SE
- CategoryTransistors - IGBTs - Single
- Datasheet STGP6M65DF2 Datasheet
-
ECAD Model
- Share
In Stock: 1,101
Can ship immediately
Pricing:
- 1$1.15
- 10$1.02623
- 100$0.80022
- 500$0.66106
- 2,000$0.48709
- 6,000$0.4639
Quote It
Technical Details
- Series:M
- Package:Tube
- Part Status:Active
- IGBT Type:Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):650 V
- Current - Collector (Ic) (Max):12 A
- Current - Collector Pulsed (Icm):24 A
- Vce(on) (Max) @ Vge, Ic:2V @ 15V, 6A
- Power - Max:88 W
- Switching Energy:40µJ (on), 136µJ (off)
- Input Type:Standard
- Gate Charge:21.2 nC
- Td (on/off) @ 25°C:12ns/86ns
- Test Condition:400V, 6A, 22Ohm, 15V
- Reverse Recovery Time (trr):140 ns
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Supplier Device Package:TO-220
