APT45GP120B2DQ2G
Microchip Technology
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionIGBT 1200V 113A 625W TMAX
- CategoryTransistors - IGBTs - Single
- Datasheet APT45GP120B2DQ2G Datasheet
-
ECAD Model
- Share
In Stock: 149
Can ship immediately
Pricing:
- 1$17
- 10$15.72212
- 25$14.447
- 100$13.42723
- 250$12.32245
- 500$11.72759
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Technical Details
- Series:POWER MOS 7®
- Package:Tube
- Part Status:Active
- IGBT Type:PT
- Voltage - Collector Emitter Breakdown (Max):1200 V
- Current - Collector (Ic) (Max):113 A
- Current - Collector Pulsed (Icm):170 A
- Vce(on) (Max) @ Vge, Ic:3.9V @ 15V, 45A
- Power - Max:625 W
- Switching Energy:900µJ (on), 905µJ (off)
- Input Type:Standard
- Gate Charge:185 nC
- Td (on/off) @ 25°C:18ns/100ns
- Test Condition:600V, 45A, 5Ohm, 15V
- Reverse Recovery Time (trr):-
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3 Variant
- Supplier Device Package:-
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