NGD18N45CLBT4G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionINSULATED GATE BIPOLAR TRANSISTO
- CategoryTransistors - IGBTs - Single
- Datasheet NGD18N45CLBT4G Datasheet
-
ECAD Model
- Share
In Stock: 471
Can ship immediately
Pricing:
- 1$0.6
- 2,500$0.6
- 5,000$0.57143
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- IGBT Type:-
- Voltage - Collector Emitter Breakdown (Max):500 V
- Current - Collector (Ic) (Max):18 A
- Current - Collector Pulsed (Icm):50 A
- Vce(on) (Max) @ Vge, Ic:2.3V @ 4.5V, 7A
- Power - Max:115 W
- Switching Energy:-
- Input Type:Logic
- Gate Charge:-
- Td (on/off) @ 25°C:420ns/2.9µs
- Test Condition:300V, 1kOhm, 5V
- Reverse Recovery Time (trr):-
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package:DPAK
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