FGY75N60SMD
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionINSULATED GATE BIPOLAR TRANSISTO
- CategoryTransistors - IGBTs - Single
- Datasheet FGY75N60SMD Datasheet
-
ECAD Model
- Share
In Stock: 215
Can ship immediately
Pricing:
- 1$3.5
- 10$3.16998
- 450$2.53184
- 900$2.31916
- 1,350$2.03559
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- IGBT Type:Field Stop
- Voltage - Collector Emitter Breakdown (Max):600 V
- Current - Collector (Ic) (Max):150 A
- Current - Collector Pulsed (Icm):225 A
- Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 75A
- Power - Max:750 W
- Switching Energy:2.3mJ (on), 770µJ (off)
- Input Type:Standard
- Gate Charge:248 nC
- Td (on/off) @ 25°C:24ns/136ns
- Test Condition:400V, 75A, 3Ohm, 15V
- Reverse Recovery Time (trr):55 ns
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3 Variant
- Supplier Device Package:PowerTO-247-3
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