IXBT42N170

Technical Details

• Series:BIMOSFET™
• Package:Tube
• Part Status:Active
• IGBT Type:-
• Voltage - Collector Emitter Breakdown (Max):1700 V
• Current - Collector (Ic) (Max):80 A
• Current - Collector Pulsed (Icm):300 A
• Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 42A
• Power - Max:360 W
• Switching Energy:-

• Input Type:Standard
• Gate Charge:188 nC
• Td (on/off) @ 25°C:-
• Test Condition:-
• Reverse Recovery Time (trr):1.32 µs
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package:TO-268