STGB4M65DF2
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionTRENCH GATE FIELD-STOP IGBT, M S
- CategoryTransistors - IGBTs - Single
- Datasheet STGB4M65DF2 Datasheet
-
ECAD Model
- Share
In Stock: 169
Can ship immediately
Pricing:
- 1$0.5075
- 1,000$0.5075
- 2,000$0.4773
- 5,000$0.45718
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Technical Details
- Series:M
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- IGBT Type:Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):650 V
- Current - Collector (Ic) (Max):8 A
- Current - Collector Pulsed (Icm):16 A
- Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 4A
- Power - Max:68 W
- Switching Energy:40µJ (on), 136µJ (off)
- Input Type:Standard
- Gate Charge:15.2 nC
- Td (on/off) @ 25°C:12ns/86ns
- Test Condition:400V, 4A, 47Ohm, 15V
- Reverse Recovery Time (trr):133 ns
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package:D2PAK
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