HGTP5N120BND
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionIGBT 1200V 21A 167W TO220AB
- CategoryTransistors - IGBTs - Single
- Datasheet HGTP5N120BND Datasheet
-
ECAD Model
- Share
In Stock: 126
Can ship immediately
Pricing:
- 1$1.38624
- 800$1.38624
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Technical Details
- Series:-
- Package:Tube
- Part Status:Not For New Designs
- IGBT Type:NPT
- Voltage - Collector Emitter Breakdown (Max):1200 V
- Current - Collector (Ic) (Max):21 A
- Current - Collector Pulsed (Icm):40 A
- Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 5A
- Power - Max:167 W
- Switching Energy:450µJ (on), 390µJ (off)
- Input Type:Standard
- Gate Charge:53 nC
- Td (on/off) @ 25°C:22ns/160ns
- Test Condition:960V, 5A, 25Ohm, 15V
- Reverse Recovery Time (trr):65 ns
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Supplier Device Package:TO-220-3
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