HGTP10N120BN
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionIGBT 1200V 35A 298W TO220AB
- CategoryTransistors - IGBTs - Single
- Datasheet HGTP10N120BN Datasheet
-
ECAD Model
- Share
In Stock: 14,545
Can ship immediately
Pricing:
- 1$1.83293
- 800$1.83293
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Technical Details
- Series:-
- Package:Tube
- Part Status:Not For New Designs
- IGBT Type:NPT
- Voltage - Collector Emitter Breakdown (Max):1200 V
- Current - Collector (Ic) (Max):35 A
- Current - Collector Pulsed (Icm):80 A
- Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 10A
- Power - Max:298 W
- Switching Energy:320µJ (on), 800µJ (off)
- Input Type:Standard
- Gate Charge:100 nC
- Td (on/off) @ 25°C:23ns/165ns
- Test Condition:960V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr):-
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Supplier Device Package:TO-220-3
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