APT15GP60BDQ1G

Technical Details

• Series:POWER MOS 7®
• Package:Tube
• Part Status:Not For New Designs
• IGBT Type:PT
• Voltage - Collector Emitter Breakdown (Max):600 V
• Current - Collector (Ic) (Max):56 A
• Current - Collector Pulsed (Icm):65 A
• Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 15A
• Power - Max:250 W
• Switching Energy:130µJ (on), 120µJ (off)

• Input Type:Standard
• Gate Charge:55 nC
• Td (on/off) @ 25°C:8ns/29ns
• Test Condition:400V, 15A, 5Ohm, 15V
• Reverse Recovery Time (trr):-
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:TO-247-3
• Supplier Device Package:TO-247 [B]