STGW80H65DFB-4
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionIGBT BIPO 650V 80A TO247
- CategoryTransistors - IGBTs - Single
- Datasheet STGW80H65DFB-4 Datasheet
-
ECAD Model
- Share
In Stock: 164
Can ship immediately
Pricing:
- 1$4.725
- 600$4.725
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- IGBT Type:Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):650 V
- Current - Collector (Ic) (Max):120 A
- Current - Collector Pulsed (Icm):240 A
- Vce(on) (Max) @ Vge, Ic:2V @ 15V, 80A
- Power - Max:469 W
- Switching Energy:2.1mJ (on), 1.5mJ (off)
- Input Type:Standard
- Gate Charge:414 nC
- Td (on/off) @ 25°C:84ns/280ns
- Test Condition:400V, 80A, 10Ohm, 15V
- Reverse Recovery Time (trr):85 ns
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-4
- Supplier Device Package:TO-247-4L
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