APT25GP90BDQ1G
Microchip Technology
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionIGBT 900V 72A 417W TO247
- CategoryTransistors - IGBTs - Single
- Datasheet APT25GP90BDQ1G Datasheet
-
ECAD Model
- Share
In Stock: 134
Can ship immediately
Pricing:
- 1$7.3
- 57$7.3
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Technical Details
- Series:POWER MOS 7®
- Package:Tube
- Part Status:Not For New Designs
- IGBT Type:PT
- Voltage - Collector Emitter Breakdown (Max):900 V
- Current - Collector (Ic) (Max):72 A
- Current - Collector Pulsed (Icm):110 A
- Vce(on) (Max) @ Vge, Ic:3.9V @ 15V, 25A
- Power - Max:417 W
- Switching Energy:370µJ (off)
- Input Type:Standard
- Gate Charge:110 nC
- Td (on/off) @ 25°C:13ns/55ns
- Test Condition:600V, 40A, 4.3Ohm, 15V
- Reverse Recovery Time (trr):-
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3
- Supplier Device Package:TO-247 [B]
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