IXXH80N65B4D1

Technical Details

• Series:XPT™, GenX4™
• Package:Tube
• Part Status:Active
• IGBT Type:PT
• Voltage - Collector Emitter Breakdown (Max):650 V
• Current - Collector (Ic) (Max):180 A
• Current - Collector Pulsed (Icm):430 A
• Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 80A
• Power - Max:625 W
• Switching Energy:3.36mJ (on), 1.83mJ (off)

• Input Type:Standard
• Gate Charge:120 nC
• Td (on/off) @ 25°C:26ns/112ns
• Test Condition:400V, 80A, 3Ohm, 15V
• Reverse Recovery Time (trr):100 ns
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Package / Case:TO-247-3
• Supplier Device Package:-