APT50GP60B2DQ2G

Technical Details

• Series:POWER MOS 7®
• Package:Tube
• Part Status:Not For New Designs
• IGBT Type:PT
• Voltage - Collector Emitter Breakdown (Max):600 V
• Current - Collector (Ic) (Max):150 A
• Current - Collector Pulsed (Icm):190 A
• Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 50A
• Power - Max:625 W
• Switching Energy:465µJ (on), 635µJ (off)

• Input Type:Standard
• Gate Charge:165 nC
• Td (on/off) @ 25°C:19ns/85ns
• Test Condition:400V, 50A, 4.3Ohm, 15V
• Reverse Recovery Time (trr):-
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:TO-247-3 Variant
• Supplier Device Package:-