APT65GP60L2DQ2G
Microchip Technology
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionIGBT 600V 198A 833W TO264
- CategoryTransistors - IGBTs - Single
- Datasheet APT65GP60L2DQ2G Datasheet
-
ECAD Model
- Share
In Stock: 179
Can ship immediately
Pricing:
- 1$17.11
- 25$17.11
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Technical Details
- Series:POWER MOS 7®
- Package:Tube
- Part Status:Not For New Designs
- IGBT Type:PT
- Voltage - Collector Emitter Breakdown (Max):600 V
- Current - Collector (Ic) (Max):198 A
- Current - Collector Pulsed (Icm):250 A
- Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 65A
- Power - Max:833 W
- Switching Energy:605µJ (on), 895µJ (off)
- Input Type:Standard
- Gate Charge:210 nC
- Td (on/off) @ 25°C:30ns/90ns
- Test Condition:400V, 65A, 5Ohm, 15V
- Reverse Recovery Time (trr):-
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-264-3, TO-264AA
- Supplier Device Package:-
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