IXBT42N170A

Technical Details

• Series:BIMOSFET™
• Package:Tube
• Part Status:Active
• IGBT Type:-
• Voltage - Collector Emitter Breakdown (Max):1700 V
• Current - Collector (Ic) (Max):42 A
• Current - Collector Pulsed (Icm):265 A
• Vce(on) (Max) @ Vge, Ic:6V @ 15V, 21A
• Power - Max:357 W
• Switching Energy:3.43mJ (on), 430µJ (off)

• Input Type:Standard
• Gate Charge:188 nC
• Td (on/off) @ 25°C:19ns/200ns
• Test Condition:850V, 21A, 1Ohm, 15V
• Reverse Recovery Time (trr):330 ns
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package:TO-268