IXBH10N300HV

Technical Details

• Series:BIMOSFET™
• Package:Tube
• Part Status:Active
• IGBT Type:-
• Voltage - Collector Emitter Breakdown (Max):3000 V
• Current - Collector (Ic) (Max):34 A
• Current - Collector Pulsed (Icm):88 A
• Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 10A
• Power - Max:180 W
• Switching Energy:-

• Input Type:Standard
• Gate Charge:46 nC
• Td (on/off) @ 25°C:36ns/100ns
• Test Condition:960V, 10A, 10Ohm, 15V
• Reverse Recovery Time (trr):1.6 µs
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package:TO-263