SGW10N60RUFDTM

ON Semiconductor
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Technical Details

  • Series:-
  • Package:Tape & Reel (TR)
  • Part Status:Obsolete
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):16 A
  • Current - Collector Pulsed (Icm):30 A
  • Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 10A
  • Power - Max:75 W
  • Switching Energy:141µJ (on), 215µJ (off)

 

  • Input Type:Standard
  • Gate Charge:30 nC
  • Td (on/off) @ 25°C:15ns/36ns
  • Test Condition:300V, 10A, 20Ohm, 15V
  • Reverse Recovery Time (trr):60 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D²PAK

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