APT11GP60BDQBG

Technical Details

• Series:POWER MOS 7®
• Package:Tube
• Part Status:Obsolete
• IGBT Type:PT
• Voltage - Collector Emitter Breakdown (Max):600 V
• Current - Collector (Ic) (Max):41 A
• Current - Collector Pulsed (Icm):45 A
• Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 11A
• Power - Max:187 W
• Switching Energy:46µJ (on), 90µJ (off)

• Input Type:Standard
• Gate Charge:40 nC
• Td (on/off) @ 25°C:7ns/29ns
• Test Condition:400V, 11A, 5Ohm, 15V
• Reverse Recovery Time (trr):-
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:TO-247-3
• Supplier Device Package:TO-247-3