STGD3NB60SD-1

STMicroelectronics
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Technical Details

  • Series:PowerMESH™
  • Package:Tube
  • Part Status:Obsolete
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):6 A
  • Current - Collector Pulsed (Icm):25 A
  • Vce(on) (Max) @ Vge, Ic:1.5V @ 15V, 3A
  • Power - Max:48 W
  • Switching Energy:1.1mJ (on), 1.15mJ (off)

 

  • Input Type:Standard
  • Gate Charge:18 nC
  • Td (on/off) @ 25°C:125µs/3.4µs
  • Test Condition:480V, 3A, 1kOhm, 15V
  • Reverse Recovery Time (trr):1.7 µs
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package:DPAK

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