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Technical Details

  • Series:BIMOSFET™
  • Package:Tube
  • Part Status:Not For New Designs
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):3000 V
  • Current - Collector (Ic) (Max):130 A
  • Current - Collector Pulsed (Icm):600 A
  • Vce(on) (Max) @ Vge, Ic:3.2V @ 15V, 55A
  • Power - Max:625 W
  • Switching Energy:-

 

  • Input Type:Standard
  • Gate Charge:335 nC
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):1.9 µs
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:PLUS247™-3

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