IXBK75N170A

Technical Details

• Series:BIMOSFET™
• Package:Tube
• Part Status:Active
• IGBT Type:-
• Voltage - Collector Emitter Breakdown (Max):1700 V
• Current - Collector (Ic) (Max):110 A
• Current - Collector Pulsed (Icm):300 A
• Vce(on) (Max) @ Vge, Ic:6V @ 15V, 42A
• Power - Max:1040 W
• Switching Energy:3.8mJ (off)

• Input Type:Standard
• Gate Charge:358 nC
• Td (on/off) @ 25°C:26ns/418ns
• Test Condition:1360V, 42A, 1Ohm, 15V
• Reverse Recovery Time (trr):360 ns
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Package / Case:TO-264-3, TO-264AA
• Supplier Device Package:TO-264