APT102GA60B2
Microchip Technology
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionIGBT 600V 183A 780W TO247
- CategoryTransistors - IGBTs - Single
- Datasheet APT102GA60B2 Datasheet
-
ECAD Model
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Technical Details
- Series:POWER MOS 8™
- Package:Tube
- Part Status:Obsolete
- IGBT Type:PT
- Voltage - Collector Emitter Breakdown (Max):600 V
- Current - Collector (Ic) (Max):183 A
- Current - Collector Pulsed (Icm):307 A
- Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 62A
- Power - Max:780 W
- Switching Energy:1.354mJ (on), 1.614mJ (off)
- Input Type:Standard
- Gate Charge:294 nC
- Td (on/off) @ 25°C:28ns/212ns
- Test Condition:400V, 62A, 4.7Ohm, 15V
- Reverse Recovery Time (trr):-
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-247-3 Variant
- Supplier Device Package:-
