GA35XCP12-247

GeneSiC Semiconductor
In Stock: 172

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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Obsolete
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):35 A
  • Vce(on) (Max) @ Vge, Ic:3V @ 15V, 35A
  • Power - Max:-
  • Switching Energy:2.66mJ (on), 4.35mJ (off)

 

  • Input Type:Standard
  • Gate Charge:50 nC
  • Td (on/off) @ 25°C:-
  • Test Condition:800V, 35A, 22Ohm, 15V
  • Reverse Recovery Time (trr):36 ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AB

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