GPA030A135MN-FDR
SemiQ
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionIGBT 1350V 60A 329W TO3PN
- CategoryTransistors - IGBTs - Single
- Datasheet GPA030A135MN-FDR Datasheet
-
ECAD Model
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In Stock: 156
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Technical Details
- Series:-
- Package:Tube
- Part Status:Obsolete
- IGBT Type:Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):1350 V
- Current - Collector (Ic) (Max):60 A
- Current - Collector Pulsed (Icm):90 A
- Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 30A
- Power - Max:329 W
- Switching Energy:4.4mJ (on), 1.18mJ (off)
- Input Type:Standard
- Gate Charge:300 nC
- Td (on/off) @ 25°C:30ns/145ns
- Test Condition:600V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr):450 ns
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Package / Case:TO-3
- Supplier Device Package:TO-3PN
