IXBT20N360HV

Technical Details

• Series:BIMOSFET™
• Package:Tube
• Part Status:Not For New Designs
• IGBT Type:-
• Voltage - Collector Emitter Breakdown (Max):3600 V
• Current - Collector (Ic) (Max):70 A
• Current - Collector Pulsed (Icm):220 A
• Vce(on) (Max) @ Vge, Ic:3.4V @ 15V, 20A
• Power - Max:430 W
• Switching Energy:15.5mJ (on), 4.3mJ (off)

• Input Type:Standard
• Gate Charge:110 nC
• Td (on/off) @ 25°C:18ns/238ns
• Test Condition:1500V, 20A, 10Ohm, 15V
• Reverse Recovery Time (trr):1.7 µs
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package:TO-268