SI1026X-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 60V 0.305A SC89-6
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SI1026X-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 53,371
Can ship immediately
Pricing:
- 1$0.47
- 3,000$0.1819
- 6,000$0.17082
- 15,000$0.15973
- 30,000$0.15197
- 75,000$0.15117
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):60V
- Current - Continuous Drain (Id) @ 25°C:305mA
- Rds On (Max) @ Id, Vgs:1.4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:30pF @ 25V
- Power - Max:250mW
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:SOT-563, SOT-666
- Supplier Device Package:SC-89-6
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