IRF8313TRPBF

Technical Details

• Series:HEXFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Not For New Designs
• FET Type:2 N-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:9.7A
• Rds On (Max) @ Id, Vgs:15.5mOhm @ 9.7A, 10V

• Vgs(th) (Max) @ Id:2.35V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs:9nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:760pF @ 15V
• Power - Max:2W
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package:8-SO