SIS990DN-T1-GE3

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Standard
• Drain to Source Voltage (Vdss):100V
• Current - Continuous Drain (Id) @ 25°C:12.1A
• Rds On (Max) @ Id, Vgs:85mOhm @ 8A, 10V

• Vgs(th) (Max) @ Id:4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:250pF @ 50V
• Power - Max:25W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:PowerPAK® 1212-8 Dual
• Supplier Device Package:PowerPAK® 1212-8 Dual