EPC2108

Technical Details

• Series:eGaN®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:3 N-Channel (Half Bridge + Synchronous Bootstrap)
• FET Feature:GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss):60V, 100V
• Current - Continuous Drain (Id) @ 25°C:1.7A, 500mA
• Rds On (Max) @ Id, Vgs:190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V

• Vgs(th) (Max) @ Id:2.5V @ 100µA, 2.5V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs:0.22nC @ 5V, 0.044nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds:22pF @ 30V, 7pF @ 30V
• Power - Max:-
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:9-VFBGA
• Supplier Device Package:9-BGA (1.35x1.35)