FF6MR12W2M1B11BOMA1

Technical Details

• Series:CoolSiC™+
• Package:Tray
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss):1200V
• Current - Continuous Drain (Id) @ 25°C:200A (Tj)
• Rds On (Max) @ Id, Vgs:5.63mOhm @ 200A, 15V

• Vgs(th) (Max) @ Id:5.55V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs:496nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds:14700pF @ 800V
• Power - Max:20mW (Tc)
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Chassis Mount
• Package / Case:Module
• Supplier Device Package:AG-EASY2BM-2