SSM6L09FUTE85LF
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N/P-CH 30V 0.4A/0.2A US6
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SSM6L09FUTE85LF Datasheet
-
ECAD Model
- Share
In Stock: 8,871
Can ship immediately
Pricing:
- 1$0.51
- 3,000$0.10679
- 6,000$0.10086
- 15,000$0.09196
- 30,000$0.08602
- 75,000$0.08306
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N and P-Channel
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25°C:400mA, 200mA
- Rds On (Max) @ Id, Vgs:700mOhm @ 200MA, 10V
- Vgs(th) (Max) @ Id:1.8V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:-
- Input Capacitance (Ciss) (Max) @ Vds:20pF @ 5V
- Power - Max:300mW
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-TSSOP, SC-88, SOT-363
- Supplier Device Package:US6
