SI3552DV-T1-E3

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N and P-Channel
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:2.5A
• Rds On (Max) @ Id, Vgs:105mOhm @ 2.5A, 10V

• Vgs(th) (Max) @ Id:1V @ 250µA (Min)
• Gate Charge (Qg) (Max) @ Vgs:3.2nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds:-
• Power - Max:1.15W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package:6-TSOP