SI5902BDC-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET 2N-CH 30V 4A 1206-8
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SI5902BDC-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 21,563
Can ship immediately
Pricing:
- 1$1.38
- 3,000$0.64663
- 6,000$0.61627
- 15,000$0.59458
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25°C:4A
- Rds On (Max) @ Id, Vgs:65mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id:3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:220pF @ 15V
- Power - Max:3.12W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SMD, Flat Lead
- Supplier Device Package:1206-8 ChipFET™
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