EM6M1T2R

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Not For New Designs
• FET Type:N and P-Channel
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):30V, 20V
• Current - Continuous Drain (Id) @ 25°C:100mA, 200mA
• Rds On (Max) @ Id, Vgs:8Ohm @ 10mA, 4V

• Vgs(th) (Max) @ Id:-
• Gate Charge (Qg) (Max) @ Vgs:0.9nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:13pF @ 5V
• Power - Max:150mW
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:SOT-563, SOT-666
• Supplier Device Package:EMT6