SIS932EDN-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH DL 30V PWRPAK 1212-8
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet SIS932EDN-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 10,010
Can ship immediately
Pricing:
- 1$0.68
- 3,000$0.26371
- 6,000$0.24763
- 15,000$0.23156
- 30,000$0.22031
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Standard
- Drain to Source Voltage (Vdss):30V
- Current - Continuous Drain (Id) @ 25°C:6A (Tc)
- Rds On (Max) @ Id, Vgs:22mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id:1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:1000pF @ 15V
- Power - Max:2.6W (Ta), 23W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:PowerPAK® 1212-8 Dual
- Supplier Device Package:PowerPAK® 1212-8 Dual
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