CSD85312Q3E

Technical Details

• Series:NexFET™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:2 N-Channel (Dual) Common Source
• FET Feature:Logic Level Gate, 5V Drive
• Drain to Source Voltage (Vdss):20V
• Current - Continuous Drain (Id) @ 25°C:39A
• Rds On (Max) @ Id, Vgs:12.4mOhm @ 10A, 8V

• Vgs(th) (Max) @ Id:1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:15.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:2390pF @ 10V
• Power - Max:2.5W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-PowerVDFN
• Supplier Device Package:8-VSON (3.3x3.3)