EPC2101

Technical Details

• Series:eGaN®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:2 N-Channel (Half Bridge)
• FET Feature:GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss):60V
• Current - Continuous Drain (Id) @ 25°C:9.5A, 38A
• Rds On (Max) @ Id, Vgs:11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V

• Vgs(th) (Max) @ Id:2.5V @ 3mA, 2.5V @ 12mA
• Gate Charge (Qg) (Max) @ Vgs:2.7nC @ 5V, 12nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds:300pF @ 30V, 1200pF @ 30V
• Power - Max:-
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:Die
• Supplier Device Package:Die