SIZ998DT-T1-GE3

Technical Details

• Series:TrenchFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:2 N-Channel (Dual), Schottky
• FET Feature:Standard
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:20A (Tc), 60A (Tc)
• Rds On (Max) @ Id, Vgs:6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V

• Vgs(th) (Max) @ Id:2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:8.1nC @ 4.5V, 19.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:930pF @ 15V, 2620pF @ 15V
• Power - Max:20.2W, 32.9W
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-PowerWDFN
• Supplier Device Package:8-PowerPair®