ECH8601M-TL-H
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionN-CHANNEL POWER MOSFET
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet ECH8601M-TL-H Datasheet
-
ECAD Model
- Share
In Stock: 12,852
Can ship immediately
Pricing:
- 1$0.17
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- FET Type:2 N-Channel (Dual) Common Drain
- FET Feature:Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss):24V
- Current - Continuous Drain (Id) @ 25°C:8A (Ta)
- Rds On (Max) @ Id, Vgs:23mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id:1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:7.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:-
- Power - Max:-
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SMD, Flat Lead
- Supplier Device Package:8-ECH
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