PMDPB56XN,115

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:2 N-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:3.1A
• Rds On (Max) @ Id, Vgs:73mOhm @ 3.1A, 4.5V

• Vgs(th) (Max) @ Id:1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:2.9nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:170pF @ 15V
• Power - Max:510mW
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:6-UDFN Exposed Pad
• Supplier Device Package:DFN2020-6