NTGD3133PT1G

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:2 P-Channel (Dual)
• FET Feature:Logic Level Gate
• Drain to Source Voltage (Vdss):20V
• Current - Continuous Drain (Id) @ 25°C:1.6A
• Rds On (Max) @ Id, Vgs:145mOhm @ 2.2A, 4.5V

• Vgs(th) (Max) @ Id:1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:5.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:400pF @ 10V
• Power - Max:560mW
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package:6-TSOP