BSO211PH

Technical Details

• Series:OptiMOS™ P
• Package:Bulk
• Part Status:Active
• FET Type:2 P-Channel (Dual)
• FET Feature:Logic Level Gate, 2.5V Drive
• Drain to Source Voltage (Vdss):20V
• Current - Continuous Drain (Id) @ 25°C:4A (Ta)
• Rds On (Max) @ Id, Vgs:67mOhm @ 4.6A, 4.5V

• Vgs(th) (Max) @ Id:1.2V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs:10nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:1095pF @ 15V
• Power - Max:1.6W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:532-BFBGA, FCBGA
• Supplier Device Package:532-FCBGA (23x23)