EFC6612R-TF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionN-CHANNEL, MOSFET
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet EFC6612R-TF Datasheet
-
ECAD Model
- Share
In Stock: 2,020,183
Can ship immediately
Pricing:
- 1$0.35
- 5,000$0.35
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:2 N-Channel (Dual) Common Drain
- FET Feature:Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss):-
- Current - Continuous Drain (Id) @ 25°C:-
- Rds On (Max) @ Id, Vgs:-
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:27nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:-
- Power - Max:2.5W
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:6-SMD, No Lead
- Supplier Device Package:6-CSP (1.77x3.54)
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