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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):25V
  • Current - Continuous Drain (Id) @ 25°C:220mA, 460mA
  • Rds On (Max) @ Id, Vgs:4Ohm @ 400mA, 4.5V

 

  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:9.5pF @ 10V
  • Power - Max:700mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:SuperSOT™-6

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