EFC6612R-A-TF

Rochester Electronics
In Stock: 185,143

Can ship immediately

Pricing:
  • 1$0.47

Quote It

Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:2 N-Channel (Dual) Asymmetrical
  • FET Feature:Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:-

 

  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:2.5W
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, No Lead
  • Supplier Device Package:6-CSP (1.77x3.54)

Related Products


FDMC8298

N-CHANNEL POWER TRENCH MOSFET

  • 1: $0.47000

FS5AS-06-T13#B21

HIGH SPEED SWITCHING N CHANNEL ,

  • 1: $0.47000

FQPF9N25CRDTU

8.8A, 250V, N-CHANNEL, MOSFET

  • 1: $0.47000

UPA2450CTL-E1-A

SMALL SIGNAL N-CHANNEL MOSFET

  • 1: $0.47000

FDS9933BZ

P-CHANNEL POWER MOSFET

FDS9933BZ Datasheet
  • 1: $0.47000

IRFR2209A

PFET, 4.6A I(D), 200V, 0.8OHM, 1

  • 1: $0.47000

MIC5018BM4TR

HIGH-SIDE MOSFET DRIVER

  • 1: $0.47000

IRFR2209AS2463

TO 252 PACKAGE STANDARD GATE DEV

  • 1: $0.47000

CA5130E

OPERATIONAL AMPLIFIER W/MOSFET I

  • 1: $0.47000

FSS275-TL-E-SA

N-CHANNEL SILICON MOSFET

  • 1: $0.48000

Top