BSC750N10NDGATMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPFET, 3.2A I(D), 100V, 0.075OHM,
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet BSC750N10NDGATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 2,783
Can ship immediately
Pricing:
- 1$0.51
- 5,000$0.51
- 10,000$0.49083
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Technical Details
- Series:OptiMOS™
- Package:Bulk
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Standard
- Drain to Source Voltage (Vdss):100V
- Current - Continuous Drain (Id) @ 25°C:3.2A
- Rds On (Max) @ Id, Vgs:75mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:4V @ 12µA
- Gate Charge (Qg) (Max) @ Vgs:11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:720pF @ 50V
- Power - Max:26W
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerVDFN
- Supplier Device Package:PG-TDSON-8-4
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