NTMD6601NR2G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSMALL SIGNAL N-CHANNEL MOSFET
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet NTMD6601NR2G Datasheet
-
ECAD Model
- Share
In Stock: 61,858
Can ship immediately
Pricing:
- 1$0.53
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):80V
- Current - Continuous Drain (Id) @ 25°C:1.1A
- Rds On (Max) @ Id, Vgs:215mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id:3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:400pF @ 25V
- Power - Max:600mW
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package:8-SOIC
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