NVMFD5853NWFT1G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionN-CHANNEL, MOSFET
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet NVMFD5853NWFT1G Datasheet
-
ECAD Model
- Share
In Stock: 3,164
Can ship immediately
Pricing:
- 1$0.72
- 1,500$0.72
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):40V
- Current - Continuous Drain (Id) @ 25°C:12A
- Rds On (Max) @ Id, Vgs:10mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:1225pF @ 25V
- Power - Max:3.1W
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
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