NVMFD5485NLT1G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER FIELD-EFFECT TRANSISTOR
- CategoryTransistors - FETs, MOSFETs - Arrays
- Datasheet NVMFD5485NLT1G Datasheet
-
ECAD Model
- Share
In Stock: 6,193
Can ship immediately
Pricing:
- 1$0.84
- 1,500$0.84
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:2 N-Channel (Dual)
- FET Feature:Logic Level Gate
- Drain to Source Voltage (Vdss):60V
- Current - Continuous Drain (Id) @ 25°C:5.3A
- Rds On (Max) @ Id, Vgs:44mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:560pF @ 25V
- Power - Max:2.9W
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Package / Case:8-PowerTDFN
- Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
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